公开(公告)号：US11574994B2

公开(公告)日：2023-02-07

申请号：US17211035

申请日：2021-03-24

Applicant: Kioxia Corporation

Inventor： Masahiro Shimura ,  Mitsuhiro Noguchi

IPC: H01L49/02 ,  H01L27/06 ,  H01L23/522

Abstract: A semiconductor device according to embodiments includes: a first conductivity-type first semiconductor layer set to a first potential; a second conductivity-type second semiconductor layer stacked on the first semiconductor layer and set to a second potential; an interlayer insulating film disposed on a main surface of the second semiconductor layer; a resistor disposed above the first semiconductor layer while interposing the second semiconductor layer and the interlayer insulating film therebetween; and a terminal electrically connected to the second semiconductor layer.