公开(公告)号：US20220028739A1

公开(公告)日：2022-01-27

申请号：US17495417

申请日：2021-10-06

Applicant: Kioxia Corporation

Inventor： Satoshi WAKATSUKI ,  Tomohisa IINO ,  Naomi FUKUMAKI ,  Misuzu SATO ,  Masakatsu TAKEUCHI

IPC: H01L21/768

Abstract: A semiconductor device according to an embodiment includes: a barrier metal layer provided on a surface of an insulating layer; and a conductive layer having a first metal layer provided on a surface of the barrier metal layer, and a second metal layer provided on a surface of the first metal layer. The second metal layer includes an identical metal to metal of the first metal layer, and an impurity configured to remove fluorine bonded to the metal.

公开(公告)号：US20210082753A1

公开(公告)日：2021-03-18

申请号：US16814716

申请日：2020-03-10

Applicant: Kioxia Corporation

Inventor： Satoshi WAKATSUKI ,  Tomohisa IINO ,  Naomi FUKUMAKI ,  Misuzu SATO ,  Masakatsu TAKEUCHI

IPC: H01L21/768

Abstract: A semiconductor device according to an embodiment includes: a barrier metal layer provided on a surface of an insulating layer; and a conductive layer having a first metal layer provided on a surface of the barrier metal layer, and a second metal layer provided on a surface of the first metal layer. The second metal layer includes an identical metal to metal of the first metal layer, and an impurity configured to remove fluorine bonded to the metal.