公开(公告)号：US20240105539A1

公开(公告)日：2024-03-28

申请号：US18459841

申请日：2023-09-01

Applicant: Kioxia Corporation

Inventor： Naoya SHIROSHITA ,  Masayuki MIURA

IPC: H01L23/31 ,  H01L21/56 ,  H01L23/00 ,  H01L23/29

CPC classification number: H01L23/3135 ,  H01L21/56 ,  H01L23/295 ,  H01L23/562

Abstract: A semiconductor device includes: a wiring substrate; at least one first semiconductor element provided above the wiring substrate; a first resin layer configured to seal the first semiconductor element; and a second resin layer provided on an outer surface of the first resin layer. A Young's modulus of the second resin layer is greater than a Young's modulus of the first resin layer, and/or a linear thermal expansion coefficient of the second resin layer is greater than a linear thermal expansion coefficient of the first resin layer.