公开(公告)号：US20230066475A1

公开(公告)日：2023-03-02

申请号：US17549274

申请日：2021-12-13

Applicant: Kioxia Corporation

Inventor： Shun SHIMIZU ,  Takashi ISHIDA

IPC: H01L27/11582 ,  H01L27/11565 ,  H01L23/528

Abstract: A semiconductor storage device includes: a first stack having a first insulation film and a first conductive film alternately stacked in a first direction; a plurality of first column portions respectively including a first semiconductor portion extending in the first stack in the first direction and a charge trapping film provided on an outer circumferential surface of the first semiconductor portion; and a first isolation portion penetrating through an upper-layer portion of the first stack in the first direction, extending in a second direction that crosses the first direction, including a second insulation film and a third insulation film arranged via the second insulation film, and configured to electrically isolate the first conductive film included in the upper-layer portion of the first stack in a third direction that crosses the first and second directions.