公开(公告)号：US20230413530A1

公开(公告)日：2023-12-21

申请号：US18178474

申请日：2023-03-03

Applicant: Kioxia Corporation

Inventor： Akifumi GAWASE ,  Shuntaro YAMASHITA

IPC: H10B12/00

CPC classification number: H10B12/33 ,  H10B12/05

Abstract: According to one embodiment, a semiconductor device includes first and second electrodes comprising a metal oxide an oxide semiconductor layer between the first and second electrodes, a gate electrode surrounding the oxide semiconductor layer, a gate insulating layer, a first insulating layer between the first and gate electrodes, a second insulating layer between the second and gate electrodes, a first conductive layer contacting the surface of the first electrode, a second conductive layer contacting the surface of second electrode, a first layer surrounding the first electrode, a second layer surrounding the second electrode, a third insulating layer between the first electrode and the first insulating layer and contacting the gate insulating layer and the first layer, and a fourth insulating layer between the second electrode and the second insulating layer and contacting the gate insulating layer and the second layer.