公开(公告)号：US20250107069A1

公开(公告)日：2025-03-27

申请号：US18884101

申请日：2024-09-12

Applicant: Kioxia Corporation

Inventor： Takeru MAEDA ,  Sakuya KANEKO ,  Kenichiro TORATANI ,  Takafumi OCHIAI ,  Kazuhiro MATSUO ,  Masaya TODA ,  Ha HOANG ,  Kotaro NODA

IPC: H10B12/00 ,  H01L29/786

Abstract: According to one embodiment a semiconductor device includes an oxide semiconductor column that extends in a first direction. A first electrode contacts a first end of the oxide semiconductor column and a second electrode contacts a second end. A gate electrode surrounds a portion of the oxide semiconductor column. A first insulating film is between the gate electrode and the oxide semiconductor column. A second insulating film is between the gate electrode and the first electrode in the first direction and surrounds the oxide semiconductor column via the first insulating film. A region in which at least a part of the oxide semiconductor column is accommodated is formed by the gate electrode and the second insulating film, and the region has a stepped surface facing towards the second electrode.

公开(公告)号：US20240324171A1

公开(公告)日：2024-09-26

申请号：US18593049

申请日：2024-03-01

Applicant: Kioxia Corporation

Inventor： Tsuyoshi SUGISAKI ,  Takeru MAEDA ,  Kotaro NODA

IPC: H10B12/00

CPC classification number: H10B12/05 ,  H10B12/315

Abstract: A semiconductor device includes: a first electrode, a first insulating layer, a second insulating layer, and a second electrode arranged in a stacking direction; a gate electrode interposed between the first and second insulating layers in the stacking direction, and extending in a first direction; and a channel layer penetrating the gate electrode and coupled to the first electrode and the second electrode. The channel layer has a first cross-sectional area at a height position of the first insulating layer and a second cross-sectional area at a height position of the gate electrode, the first cross-sectional area is larger than the second cross-sectional area. The gate electrode has a wider width at a penetrating portion of the channel layer than any other portions in a second direction intersecting the stacking direction and the first direction.

公开(公告)号：US20250089237A1

公开(公告)日：2025-03-13

申请号：US18595558

申请日：2024-03-05

Applicant: Kioxia Corporation

Inventor： Takeru MAEDA ,  Shosuke FUJII ,  Kotaro NODA

IPC: H10B12/00

Abstract: A semiconductor device includes: an oxide semiconductor including a first end and a second end and extending in a first direction oriented from the second end to the first end; a first electrode configured to come into contact with the first end of the oxide semiconductor; a second electrode configured to come into contact with the second end of the oxide semiconductor; a gate electrode configured to enclose the oxide semiconductor with a first insulating film interposed therebetween between the first and second ends of the oxide semiconductor; and a metal film including a cylindrical portion that comes into contact with the gate electrode in the first direction and encloses the oxide semiconductor with the first insulating film interposed therebetween.

公开(公告)号：US20240306368A1

公开(公告)日：2024-09-12

申请号：US18593988

申请日：2024-03-04

Applicant: Kioxia Corporation

Inventor： Takeru MAEDA ,  Kotaro NODA ,  Shosuke FUJII

IPC: H10B12/00

CPC classification number: H10B12/33 ,  H10B12/05

Abstract: A semiconductor device includes a semiconductor substrate, a memory capacitor provided on the semiconductor substrate, a first conductor provided above the memory capacitor and extending in a first direction, a second conductor provided above the first conductor and extending in the first direction, an oxide semiconductor layer provided between the first conductor and the second conductor and extending in the first direction, a conductive oxide layer between the second conductor and the oxide semiconductor layer, a first conductive layer between the conductive oxide layer and the second conductor, and an insulating layer in contact with the conductive oxide layer, wherein a portion of the conductive oxide layer is between and aligned with the first insulating layer and the oxide semiconductor layer in the first direction.

公开(公告)号：US20240057313A1

公开(公告)日：2024-02-15

申请号：US18179620

申请日：2023-03-07

Applicant: Kioxia Corporation

Inventor： Taro SHIOKAWA ,  Takeru MAEDA ,  Kotaro NODA ,  Shosuke FUJII

IPC: H10B12/00

CPC classification number: H10B12/33 ,  H10B12/05

Abstract: A semiconductor device includes a semiconductor substrate, a first layer formed on the semiconductor substrate and including a semiconductor element and a first insulating film, a second layer formed above the first layer and including a channel including an oxide semiconductor and a second insulating film, and a third layer formed above the second layer, and including an electrode formed on the channel and a third insulating film having a film density less than at least one of a film density of the first insulating film or a film density of the second insulating film.