公开(公告)号：US20230051013A1

公开(公告)日：2023-02-16

申请号：US17643277

申请日：2021-12-08

Applicant: Kioxia Corporation

Inventor： Keisuke NAKATSUKA ,  Takuya OHOKA

IPC: H01L27/108

Abstract: In one embodiment, a semiconductor device includes a substrate, transistors on the substrate, and a stacked film provided above the transistors, including electrode layers separated from each other in a first direction, and including first, second and third regions. The device further includes plugs provided to the electrode layers in the first region, a first columnar portion in the second region, and a second columnar portion in the third region. At least one electrode layer among the electrode layers includes a first portion in the first region, a second portion in the second region, and a third portion in the third region, and is a continuous film from the second portion to the third portion via the first portion. The transistors include first, second and third transistors provided right under the first, second and third regions and electrically connected to first, second and third plugs among the plugs, respectively.