公开(公告)号：US12100780B2

公开(公告)日：2024-09-24

申请号：US17182015

申请日：2021-02-22

Applicant: Korea Advanced Institute of Science and Technology

Inventor： Sanghyeon Kim ,  Juhyuk Park ,  DaeMyeong Geum

IPC: H01L27/15 ,  H01L33/00 ,  H01L33/04 ,  H01L33/30

CPC classification number: H01L33/04 ,  H01L27/156 ,  H01L33/0062 ,  H01L33/30

Abstract: Various embodiments may provide a highly efficient micro light-emitting diode (LED) in a low current range, a method of fabricating the same, and a display including the same. The micro LED includes a first conductive type semiconductor layer and a second conductive type semiconductor layer and an active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer and having a single quantum well structure. The single quantum well structure may be formed so that a ratio of a conduction band offset of any one of the first conductive type semiconductor layer or the second conductive type semiconductor layer and a valence band offset of the other of the first conductive type semiconductor layer or the second conductive type semiconductor layer becomes greater than 0 and less than 1.