公开(公告)号：US20020185196A1

公开(公告)日：2002-12-12

申请号：US10145167

申请日：2002-05-13

Applicant: Korea Institute of Science and Technology

Inventor： Kyung-Ho Shin ,  Woo-Young Lee ,  Young-Joon Park ,  Kyung-Il Lee ,  Jae-Geun Ha

IPC: H01F041/00

CPC classification number: B82Y25/00 ,  B82Y40/00 ,  H01F41/307 ,  H01L43/12 ,  Y10T29/49044

Abstract: A fabrication method of a magnetic tunnel junction includes the steps of: forming a magnetic tunnel junction constructed having a first magnetic layer, a tunnel barrier formed at an upper surface of the first magnetic layer and a second magnetic layer formed at an upper surface of the tunnel barrier; and thermally treating the junction rapidly for 5 seconds null10 minutes at a temperature of 200null600null C. to re-distribute oxygens in the tunnel barrier and make the interface between the tunnel barrier and the magnetic layer to be even. The tunneling magnetoresistance and thermal stability of the magnetic tunnel junction can be improved through the rapid thermal annealing.

Abstract translation: 磁性隧道结的制造方法包括以下步骤：形成具有第一磁性层的磁性隧道结，形成在第一磁性层的上表面的隧道势垒和形成在第一磁性层的上表面的第二磁性层 隧道屏障 并在200〜600℃的温度下快速热处理接头5秒〜10分钟，使隧道势垒中的氧再分配，使隧道势垒与磁性层之间的界面均匀。 通过快速热退火可以提高磁隧道结的隧道磁阻和热稳定性。