公开(公告)号：US5858126A

公开(公告)日：1999-01-12

申请号：US792494

申请日：1997-01-31

申请人： Kunihide Takashima ,  Ryutarou Kawamata ,  Yoshio Nakamura ,  Isao Iwanaga ,  Norito Abe

发明人： Kunihide Takashima ,  Ryutarou Kawamata ,  Yoshio Nakamura ,  Isao Iwanaga ,  Norito Abe

IPC分类号： C21D8/12 ,  H01F1/147 ,  H01F1/04

CPC分类号： C21D8/12 ,  H01F1/14775

摘要： Very high magnetic flux density grain-oriented electrical steel slab containing 2.5 to 4.0 weight percent silicon as an essential component and having a very high magnetic flux density B.sub.8 of not less than 1.92 tesla, in which by area not less than 80 percent is accounted for by matrix secondary recrystallization grains having a diameter not larger than 100 mm and not smaller than 10 mm in a direction of cold rolling and not larger than 50 mm and not smaller than 5 mm in a direction perpendicular to the cold rolling direction, and in which, moreover, of the grains in said matrix, not fewer than 50 percent by ratio of number are fine secondary recrystallization grains having an average diameter not larger than 5 mm.

摘要翻译： 非常高的磁通密度晶粒取向电工钢板，含有2.5〜4.0重量％的硅作为必要成分，具有非常高的磁通密度B8，不小于1.92特斯拉，其中不少于80％ 通过在冷轧方向上具有不大于100mm且不小于10mm的直径的矩形二次再结晶晶粒，并且在与冷轧方向垂直的方向上不大于50mm且不小于5mm， 此外，在所述基体中的晶粒中，不少于50％的数量是具有不大于5mm的平均直径的精细二次再结晶晶粒。