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    Method for making three-dimensional metal-insulator-metal capacitors for dynamic random access memory (DRAM) and ferroelectric random access memory (FERAM)
    5.
    发明授权
    Method for making three-dimensional metal-insulator-metal capacitors for dynamic random access memory (DRAM) and ferroelectric random access memory (FERAM) 失效
    制造用于动态随机存取存储器（DRAM）和铁电随机存取存储器（FERAM）的三维金属 - 绝缘体 - 金属电容器的方法

    公开(公告)号：US06630380B1

    公开(公告)日：2003-10-07

    申请号：US10261303

    申请日：2002-09-30

    申请人： Wei-Hua Cheng ,  Daniel Yen ,  Kunihiko Takahashi ,  Ming Lei ,  Thomas Joy

    发明人： Wei-Hua Cheng ,  Daniel Yen ,  Kunihiko Takahashi ,  Ming Lei ,  Thomas Joy

    IPC分类号： H01L218242

    CPC分类号： H01L21/76895 ,  H01L27/10855 ,  H01L27/11502 ,  H01L27/11507 ,  H01L28/55 ,  H01L28/60

    摘要： A method for making metal-insulator-metal (MIM) capacitors having insulators with high-dielectric-constant or ferroelectric interelectrode films compatible with the dual-damascene process is achieved. The method of integrating the MIM with a dual-damascene process is to form a planar a first insulating layer and to deposit an etch-stop layer and a second insulating layer. Capacitor node contact openings are etched to the substrate and first recesses are etched to the etch-stop layer. The contact openings and first recesses are filled with a conducting layer using a dual-damascene process. Second recesses are formed in the second insulating layer around the capacitor node contacts. A conformal first metal layer, an interelectrode dielectric layer, and a second metal layer are deposited, and are patterned at the same time to form the capacitors over the node contacts. The second recesses increase the capacitor area while the simultaneous patterning of the metal layers results in fewer processing steps.

    摘要翻译： 实现了具有与双镶嵌工艺兼容的高介电常数或铁电电极间绝缘体的金属绝缘体金属（MIM）电容器的方法。 将MIM与双镶嵌工艺集成的方法是形成平面的第一绝缘层并沉积蚀刻停止层和第二绝缘层。 将电容器节点接触开口蚀刻到衬底上，并将第一凹槽蚀刻到蚀刻停止层。 接触开口和第一凹槽使用双镶嵌工艺填充导电层。 第二凹陷形成在电容器节点触点周围的第二绝缘层中。 沉积保形第一金属层，电极间电介质层和第二金属层，并且同时形成图案以在节点触点上形成电容器。 第二凹槽增加了电容器面积，而金属层的同时构图导致较少的加工步骤。