PRODUCTION METHOD OF SEMICONDUCTOR DEVICE, SEMICONDUCTOR WAFER, AND SEMICONDUCTOR DEVICE
    1.
    发明申请
    PRODUCTION METHOD OF SEMICONDUCTOR DEVICE, SEMICONDUCTOR WAFER, AND SEMICONDUCTOR DEVICE 有权
    半导体器件,半导体器件和半导体器件的生产方法

    公开(公告)号:US20140203411A1

    公开(公告)日:2014-07-24

    申请号:US14134325

    申请日:2013-12-19

    摘要: A semiconductor wafer, includes: a plurality of element regions; a surface electrode that is disposed in each of the plurality of element regions; an insulating layer that is disposed in each of the plurality of element regions and of which height from a front side surface of the semiconductor wafer is higher than that of the surface electrode in a periphery of the surface electrode; and a dicing line groove that is formed in a front side surface of the semiconductor wafer, that surrounds the surface electrode with the insulating layer therebetween, of which height from the front side surface of the semiconductor wafer is lower than that of the insulating layer, and that extends to a perimeter of the semiconductor wafer; in which the insulating layer is formed with a communication passage that extends from a side of the surface electrode to the dicing line groove.

    摘要翻译: 一种半导体晶片,包括:多个元件区域; 设置在所述多个元件区域的每一个中的表面电极; 设置在所述多个元件区域的每一个中并且所述半导体晶片的前表面的高度高于所述表面电极的周边中的所述表面电极的绝缘层; 并且形成在半导体晶片的前侧表面上的切割线槽,其包围表面电极的绝缘层,其间距离半导体晶片的前侧表面的高度低于绝缘层的高度, 并且延伸到半导体晶片的周边; 其中绝缘层形成有从表面电极的一侧延伸到切割线槽的连通通道。