公开(公告)号：US20070054502A1

公开(公告)日：2007-03-08

申请号：US11514200

申请日：2006-09-01

申请人： Kwang Seol ,  Kyung Cho ,  Byung Kim ,  Eun Lee ,  Jae Choi

发明人： Kwang Seol ,  Kyung Cho ,  Byung Kim ,  Eun Lee ,  Jae Choi

IPC分类号： H01L21/31

CPC分类号： B82Y10/00 ,  H01L29/42332 ,  H01L29/7881

摘要： A nanodot memory formed by applying a nanodot colloid solution on a semiconductor substrate to more uniformly arranging nanodot particles with a size of several nanometers on the semiconductor substrate and a fabrication method thereof are provided. In the nanodot memory fabrication method, a first insulating film may be formed on a surface of a substrate. A nanodot colloid solution may be applied on the first insulating film. A solvent in the nanodot colloid solution may be removed such that a nanodot particles layer remains exposed on the first insulating film. A second insulating film may be formed on a surface of the semiconductor substrate, on which the nanodot particles are exposed. The nanodot particles may be formed in a monolayer structure by adjusting a concentration of nanodot particles within the nanodot colloid solution.

摘要翻译： 提供了通过在半导体衬底上施加纳米棒胶体溶液以在半导体衬底上更均匀地布置尺寸为几纳米的纳米点颗粒而形成的纳米点存储器及其制造方法。 在纳米点存储器制造方法中，可以在基板的表面上形成第一绝缘膜。 可以在第一绝缘膜上施加纳米点胶体溶液。 可以除去纳米点胶体溶液中的溶剂，使得纳米点颗粒层保持暴露在第一绝缘膜上。 可以在半导体衬底的暴露了纳米点颗粒的表面上形成第二绝缘膜。 纳米点颗粒可以通过调节纳米点胶体溶液中的纳米点颗粒的浓度而形成为单层结构。