公开(公告)号：US20210277517A1

公开(公告)日：2021-09-09

申请号：US17193046

申请日：2021-03-05

申请人： L'Air Liquide, Société Anonyme pour I'Etude et I'Exploitation des Procédés Georges Claude ,  American Air Liquide, Inc.

发明人： Yumin Liu ,  Rocio Arteaga ,  Nicolas Blasco ,  Jean-Marc Girard ,  Feng Li ,  Venkateswara R. Pallem ,  Zhengning Gao

IPC分类号： C23C16/34 ,  H01L21/02 ,  C23C16/06 ,  C23C16/455

摘要： A process for gas phase deposition of a metal or metal nitride film on a surface substrate comprises: reacting a metal-oxo or metal oxyhalide precursor with an oxophilic reagent in a reactor containing the substrate to deoxygenate the metal-oxo or metal oxyhalide precursor, and forming the metal or metal nitride film on the substrate through a vapor deposition process. The substrate is exposed to the metal oxyhalide precursor and the oxophilic reagent simultaneously or sequentially. The substrate is exposed to a reducing agent sequentially after deoxygenation.