公开(公告)号：US06277736B1

公开(公告)日：2001-08-21

申请号：US09206884

申请日：1998-12-08

申请人： L. Y. Chen ,  Heinz Shih ,  Wen-Yi Hsieh ,  Tsu-An Lin

发明人： L. Y. Chen ,  Heinz Shih ,  Wen-Yi Hsieh ,  Tsu-An Lin

IPC分类号： H01L2144

CPC分类号： H01L21/32137 ,  H01L21/28061 ,  H01L21/28123 ,  H01L21/32136

摘要： A method for forming a gate. A gate oxide layer, a polysilicon layer and a barrier layer are subsequently formed on a substrate, on which an isolation structure is formed. A conductive layer is formed on the barrier layer by sputtering deposition using titanium silicide with a low silicon content as a target. A rapid thermal process (RTP) is performed to remove the polymer nodule formed by sputtering deposition. An anti-reflection layer is formed on the conductive layer. The anti-reflection layer, the conductive layer and the barrier layer are patterned by the etchant composed of chlorine/nitrogen/hexafluoroethane until the polysilicon layer is exposed. Using the anti-reflection layer, the conductive layer and the barrier layer as a mask, the exposed polysilicon layer and the gate oxide layer underlying the exposed polysilicon layer are removed by the etchant composed of chlorine/hydrogen bromide/helium/oxygen until the substrate is exposed and a gate is formed.

摘要翻译： 一种形成栅极的方法。 随后在其上形成有隔离结构的基板上形成栅极氧化物层，多晶硅层和势垒层。 通过使用具有低硅含量的硅化钛作为靶的溅射沉积在阻挡层上形成导电层。 进行快速热处理（RTP）以除去由溅射沉积形成的聚合物结节。 在导电层上形成防反射层。 通过由氯/氮/六氟乙烷组成的蚀刻剂将抗反射层，导电层和阻挡层图案化，直到多晶硅层露出。 使用防反射层，导电层和阻挡层作为掩模，暴露的多晶硅层和暴露的多晶硅层下面的栅极氧化物层被由氯/溴化氢/氦/氧组成的蚀刻剂除去直到基板 被暴露并形成门。