公开(公告)号：US20200010973A1

公开(公告)日：2020-01-09

申请号：US16494523

申请日：2018-05-30

申请人： LG Chem, Ltd.

发明人： Ho Rim Lee ,  Chan Yeup Chung ,  Manshik Park ,  Jung Min Ko

IPC分类号： C30B9/04 ,  C30B29/36

摘要： The present disclosure relates to a silicon-based fusion composition used for a solution growth method for forming a silicon carbide single crystal, and represented by the following Formula 1, including silicon, a first metal (M1), scandium (Sc) and aluminum (Al): SiaM1bSccAld  (Formula 1) wherein a is more than 0.4 and less than 0.8, b is more than 0.2 and less than 0.6, c is more than 0.01 and less than 0.1, and d is more than 0.01 and less than 0.1.

公开(公告)号：US20200080226A1

公开(公告)日：2020-03-12

申请号：US16493147

申请日：2018-11-01

申请人： LG Chem, Ltd.

发明人： Junghwan Kim ,  Ho Rim Lee ,  Chan Yeup Chung ,  Jung Min Ko ,  Manshik Park

IPC分类号： C30B15/36 ,  C30B29/06 ,  C30B29/36

摘要： A silicon-based molten composition according to an exemplary embodiment of the present invention is used in a solution growing method for forming silicon carbide single crystal, and is expressed in Formula 1 including silicon (Si), chromium (Cr), vanadium (V), and aluminum (Al). SiaCrbVcAld   [Formula 1] In Formula 1, a is equal to or greater than 0.4 and equal to or less than 0.9, b+c is equal to or greater than 0.1 and equal to or less than 0.6, c/(b+c) is equal to or greater than 0.05 and equal to or less than 0.95, and d is equal to or greater than 0.01 and equal to or less than 0.1.

公开(公告)号：US11203818B2

公开(公告)日：2021-12-21

申请号：US16494523

申请日：2018-05-30

申请人： LG Chem, Ltd.

发明人： Ho Rim Lee ,  Chan Yeup Chung ,  Manshik Park ,  Jung Min Ko

IPC分类号： C30B29/36 ,  C30B9/04

摘要： The present disclosure relates to a silicon-based fusion composition used for a solution growth method for forming a silicon carbide single crystal, and represented by the following Formula 1, including silicon, a first metal (M1), scandium (Sc) and aluminum (Al): SiaM1bSccAld  (Formula 1) wherein a is more than 0.4 and less than 0.8, b is more than 0.2 and less than 0.6, c is more than 0.01 and less than 0.1, and d is more than 0.01 and less than 0.1.

公开(公告)号：US11193217B2

公开(公告)日：2021-12-07

申请号：US16493147

申请日：2018-11-01

申请人： LG Chem, Ltd.

发明人： Junghwan Kim ,  Ho Rim Lee ,  Chan Yeup Chung ,  Jung Min Ko ,  Manshik Park

IPC分类号： C30B29/36 ,  C30B15/36 ,  C30B29/06 ,  H01L29/16 ,  H01L29/04

摘要： A silicon-based molten composition according to an exemplary embodiment of the present invention is used in a solution growing method for forming silicon carbide single crystal, and is expressed in Formula 1 including silicon (Si), chromium (Cr), vanadium (V), and aluminum (Al). SiaCrbVcAld  [Formula 1] In Formula 1, a is equal to or greater than 0.4 and equal to or less than 0.9, b+c is equal to or greater than 0.1 and equal to or less than 0.6, c/(b+c) is equal to or greater than 0.05 and equal to or less than 0.95, and d is equal to or greater than 0.01 and equal to or less than 0.1.