公开(公告)号：US20170155071A1

公开(公告)日：2017-06-01

申请号：US15192487

申请日：2016-06-24

Applicant: LG DISPLAY CO., LTD.

Inventor： Yoondeok HAN ,  JaeMan LEE ,  SoYeon AHN ,  Heedong CHOI ,  JungSoo PARK

IPC: H01L51/50 ,  H01L27/32

CPC classification number: H01L51/5004 ,  H01L27/3209 ,  H01L27/322 ,  H01L27/3246 ,  H01L27/3248 ,  H01L51/5016 ,  H01L51/504 ,  H01L51/5044 ,  H01L51/5056 ,  H01L51/506 ,  H01L51/5072 ,  H01L51/5088 ,  H01L51/5278 ,  H01L2251/552 ,  H01L2251/558

Abstract: Discussed is an organic light emitting display device. The organic light emitting display device can include a first emission part, a second emission part on the first emission part, and a first P-type charge generation layer between the first emission part and the second emission part. The first emission part includes a first hole transport layer, a first emission layer, and a first electron transport layer. The second emission part includes a second hole transport layer, a second emission layer, and a second electron transport layer. The second hole transport layer and the first P-type charge generation layer are disposed adjacent to each other. The second hole transport layer includes a first material and a second material. The first material has an absolute value of a HOMO energy level which can be greater than an absolute value of a LUMO energy level of the first P-type charge generation layer.

公开(公告)号：US20170092887A1

公开(公告)日：2017-03-30

申请号：US15195024

申请日：2016-06-28

Applicant: LG Display Co., Ltd.

Inventor： JaeMan LEE ,  Taesun YOO ,  Mi-Young HAN ,  SoYeon AHN ,  Heedong CHOI ,  JungSoo PARK ,  Yoondeok HAN

IPC: H01L51/50 ,  H01L51/52 ,  H01L27/32

CPC classification number: H01L51/5004 ,  H01L27/3209 ,  H01L27/3211 ,  H01L51/5056 ,  H01L51/5072 ,  H01L51/5088 ,  H01L51/5271 ,  H01L51/5278 ,  H01L2251/552

Abstract: An organic light emitting device including an organic light emitting element having a low driving voltage and a high luminous efficiency is provided. The organic light emitting device includes two or more stack emission units, and a charge generating layer including an N-type charge generating layer and a P-type charge generating layer is disposed between the stack emission units. Herein, the P-type charge generating layer is formed of a material having an LUMO energy level similar to an HOMO energy level of a hole transporting layer injected with holes from the P-type charge generating layer. Accordingly, even if the P-type charge generating layer is not additionally doped with a P-type dopant, it is possible to readily inject holes into a stack emission unit adjacent to the P-type charge generating layer.