公开(公告)号：US09190169B2

公开(公告)日：2015-11-17

申请号：US13728320

申请日：2012-12-27

Applicant: LG DISPLAY CO., LTD.

Inventor： HwaDong Han ,  ChongHun Park ,  IlGi Jeong ,  JoonMin Park

IPC: G11C19/00 ,  G11C19/28 ,  G09G3/36

CPC classification number: G11C19/28 ,  G09G3/3611 ,  G09G3/3677 ,  G09G2310/0286 ,  G09G2320/045

Abstract: A shift register of the present disclosure includes a plurality of stages. Each stage includes transistors belonging to a first group for activating a Q node, transistors belonging to a second group for discharging odd and even QB nodes, transistors belonging to a third group for being activated by the odd and even QB nodes and for discharging the Q node, and a sensing circuit for sensing a threshold voltage of at least one of the transistor belonging to the third group at a period when the Q node is discharged. The shift register of the present disclosure avoids the problem of erroneous operation due to lowering of device characteristics.

Abstract translation: 本公开的移位寄存器包括多个级。 每个级包括属于用于激活Q节点的第一组的晶体管，属于用于放电奇数和偶数QB节点的第二组的晶体管，属于第三组的晶体管，用于由奇数和偶数QB节点激活并用于放电Q 节点和感测电路，用于在Q节点被放电的时段期间感测属于第三组的晶体管中的至少一个的阈值电压。 本公开的移位寄存器避免了由于设备特性的降低而导致操作错误的问题。

公开(公告)号：US20140091997A1

公开(公告)日：2014-04-03

申请号：US13728320

申请日：2012-12-27

Applicant: LG DISPLAY CO., LTD.

Inventor： HwaDong Han ,  ChongHun Park ,  IIGi Jeong ,  JoonMin Park

IPC: G11C19/28 ,  G09G3/36

CPC classification number: G11C19/28 ,  G09G3/3611 ,  G09G3/3677 ,  G09G2310/0286 ,  G09G2320/045

Abstract: The present disclosure relates to a shift register, and more particularly, a shift register having a sensing circuit for quantitatively measuring a threshold voltage shifted level of a thin film transistor, which is deteriorated due to a continuously applied direct-current (DC) voltage, in a shift register having thin film transistors using oxide silicon as an active layer.The present disclosure may provide a shift register capable of overcoming an erroneous operation caused due to lowering of device characteristics, by further connecting a sensing transistor to thin film transistors configuring the shift register formed on a display panel to sense a level of threshold voltage shift, and driving the shift register by dividing one frame into odd and even periods according to the sensing result.

Abstract translation: 本发明涉及一种移位寄存器，更具体地说，涉及一种具有感测电路的移位寄存器，该检测电路用于定量测量由连续施加的直流（DC）电压导致的薄膜晶体管的阈值电压偏移电平， 在具有使用氧化硅作为有源层的薄膜晶体管的移位寄存器中。 本公开可以提供一种能够克服由于设备特性降低而导致的错误操作的移位寄存器，通过进一步将感测晶体管连接到构成在显示面板上形成的移位寄存器的薄膜晶体管以感测阈值电压偏移的水平， 并根据感​​测结果将一帧划分成奇数和偶数周期来驱动移位寄存器。