Abstract:
A shift register of the present disclosure includes a plurality of stages. Each stage includes transistors belonging to a first group for activating a Q node, transistors belonging to a second group for discharging odd and even QB nodes, transistors belonging to a third group for being activated by the odd and even QB nodes and for discharging the Q node, and a sensing circuit for sensing a threshold voltage of at least one of the transistor belonging to the third group at a period when the Q node is discharged. The shift register of the present disclosure avoids the problem of erroneous operation due to lowering of device characteristics.
Abstract:
The present disclosure relates to a shift register, and more particularly, a shift register having a sensing circuit for quantitatively measuring a threshold voltage shifted level of a thin film transistor, which is deteriorated due to a continuously applied direct-current (DC) voltage, in a shift register having thin film transistors using oxide silicon as an active layer.The present disclosure may provide a shift register capable of overcoming an erroneous operation caused due to lowering of device characteristics, by further connecting a sensing transistor to thin film transistors configuring the shift register formed on a display panel to sense a level of threshold voltage shift, and driving the shift register by dividing one frame into odd and even periods according to the sensing result.