公开(公告)号：US20230072208A1

公开(公告)日：2023-03-09

申请号：US17897795

申请日：2022-08-29

Applicant: LG DISPLAY CO., LTD.

Inventor： Nuri ON

IPC: H01L29/423 ,  H01L29/417 ,  H01L29/786 ,  H01L29/94

Abstract: A thin film transistor and a display device comprising the same are provided, in which the thin film transistor includes an active layer, a metal oxide layer on the active layer, a gate insulating layer on the metal oxide layer, and a gate electrode on the gate insulating layer, wherein the metal oxide layer is disposed between the active layer and the gate insulating layer to contact the active layer and the gate insulating layer.

公开(公告)号：US20230070485A1

公开(公告)日：2023-03-09

申请号：US17897803

申请日：2022-08-29

Applicant: LG DISPLAY CO., LTD.

Inventor： KyeongJu MOON ,  Seunghyo KO ,  Nuri ON

IPC: H01L29/786 ,  H01L29/66

Abstract: A thin film transistor includes an active layer of an oxide semiconductor, a gate electrode provided on or under the active layer while being spaced apart from the active layer and overlapping with at least a portion of the active layer, and a gate insulating film between the active layer and the gate electrode, wherein the active layer includes copper (Cu).

公开(公告)号：US20230033999A1

公开(公告)日：2023-02-02

申请号：US17870065

申请日：2022-07-21

Applicant: LG DISPLAY CO., LTD.

Inventor： Seunghyo KO ,  Nuri ON ,  TaeWoong MOON

IPC: H01L29/786 ,  H01L27/32 ,  H01L29/66

Abstract: A thin film transistor for a display device includes an active layer, and a gate electrode spaced apart from the active layer and at least partially overlapping with the active layer, wherein the active layer includes copper, and has a concentration gradient of copper along a thickness direction of the active layer.