公开(公告)号：US20250089298A1

公开(公告)日：2025-03-13

申请号：US18800908

申请日：2024-08-12

Applicant: LG Display Co., Ltd.

Inventor： JaeHyun KIM ,  JaeYoung OH ,  KwangHeum LEE ,  Ahrum SOHN ,  Minho LEE

IPC: H01L29/417 ,  H01L27/12 ,  H01L29/786

Abstract: A thin film transistor for a display device can include an active layer disposed on a substrate, a gate electrode overlapping with the active layer, a source electrode electrically connected to the active layer, a drain electrode electrically connected to the active layer, and at least one hole in the active layer, in which the at least one hole at least partially overlaps with an edge of the gate electrode. Also, the at least one hole in the active layer can control or block diffusion of a dopant within the active layer.