公开(公告)号：US20210043709A1

公开(公告)日：2021-02-11

申请号：US16985081

申请日：2020-08-04

Applicant: LG Display Co., Ltd.

Inventor： Aram KIM ,  JaeHoon PARK ,  YoungJang LEE ,  SeonYeong KIM

IPC: H01L27/32 ,  G09G3/3233 ,  G09G3/3266

Abstract: According to an aspect of the present disclosure, The pixel circuit which controls the driving of the organic light emitting diode includes a driving TFT which supplies a driving current to the organic light emitting diode; a sampling TFT which samples a threshold voltage of the driving TFT; a first initializing TFT which supplies an initialization voltage to one electrode of the organic light emitting diode; and a storage capacitor which stores a voltage applied to the driving TFT, and at least one of the driving TFT, the sampling TFT, and the first initializing TFT includes a shielding electrode disposed between the substrate and the active layer. Therefore, even though the external light is irradiated onto a transparent substrate, a full white gray-level and a full black gray-level can be expressed so that the gray-level expressiveness may not be degraded.

公开(公告)号：US20230071089A1

公开(公告)日：2023-03-09

申请号：US17899657

申请日：2022-08-31

Applicant: LG DISPLAY CO., LTD.

Inventor： Aram KIM ,  JinSung KIM

IPC: H01L27/32

Abstract: A thin film transistor includes an active layer including an oxide semiconductor layer, a metal layer disposed on the active layer and overlapping with at least a portion of the active layer, a gate electrode spaced apart from the active layer, and overlapping with at least a portion of the active layer, and a gate insulating film between the active layer and the gate electrode, wherein the active layer includes a channel portion, a first connection portion contacting one side of the channel portion, and a second connection portion contacting the other side of the channel portion, and wherein the metal layer includes a first metal layer contacting an upper surface of the first connection portion, and a second metal layer contacting an upper surface of the second connection portion, a fabrication method of the thin film transistor, and a display apparatus comprising the same.