Photo detecting apparatus and method of manufacturing the same

    公开(公告)号:US10964745B2

    公开(公告)日:2021-03-30

    申请号:US16123616

    申请日:2018-09-06

    Abstract: Provided is a photo detecting apparatus. The photo detecting apparatus includes a thin film transistor array on a first surface of a substrate having a specific light transmissivity and a photo diode structure between the first surface and the thin film transistor array. The photo diode structure is implemented to receive and process an electromagnetic radiation through a second surface of the substrate.

    Pixel circuit and display apparatus comprising pixel circuit

    公开(公告)号:US12094417B2

    公开(公告)日:2024-09-17

    申请号:US18462132

    申请日:2023-09-06

    Abstract: According to an aspect of the present disclosure, a pixel circuit includes a first capacitor connected between a first node and a second node, a first transistor connected to the first node and supplied with a first scan signal, a driving transistor including a gate electrode connected to the second node, a first electrode connected to a first voltage supply line, and a second electrode connected to a third node, a second transistor connected between the second node and the third node and supplied with a second scan signal, a third transistor connected between the third node and a fourth node, a fourth transistor which is connected to the fourth node and is supplied with a second scan signal of a previous pixel row and a light emitting diode connected to the fourth transistor and the third transistor at the fourth node.

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