DISPLAY DEVICE INCLUDING THIN FILM TRANSISTOR AND METHOD OF FABRICATING THE SAME

    公开(公告)号:US20250089455A1

    公开(公告)日:2025-03-13

    申请号:US18750219

    申请日:2024-06-21

    Abstract: A display device includes first and second semiconductor layers on a substrate, the first and second semiconductor layers including a polycrystalline semiconductor material and an oxide semiconductor material, respectively. The device includes a first gate insulating layer on the first and second semiconductor layers. The device includes first and second gate electrodes on the first gate insulating layer, the first and second gate electrodes corresponding to the first and second semiconductor layers, respectively. The device includes a first interlayer insulating layer on the first gate electrode and the second gate electrode. The device includes first source and drain electrodes and second source and drain electrodes on the first interlayer insulating layer, the first source and drain electrodes connected to both end portions, respectively, of the first semiconductor layer, the second source and drain electrodes connected to both end portions, respectively, of the second semiconductor layer.

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