ORGANIC LIGHT-EMITTING DIODE DISPLAY DEVICE
    1.
    发明公开

    公开(公告)号:US20240206291A1

    公开(公告)日:2024-06-20

    申请号:US18200247

    申请日:2023-05-22

    CPC classification number: H10K59/879 H10K59/1201 H10K59/124 H10K59/80515

    Abstract: An organic light-emitting diode display device can include a substrate including sub-pixels associated with one pixel, each sub-pixel having an emission area and a non-emission area; first conductive lines and a second conductive line over the substrate, wherein the second conductive line crosses over the first conductive lines to define the sub-pixels; a circuit portion in the non-emission area of each sub-pixel, and including a thin film transistor in each sub-pixel; an overcoat layer over the thin film transistors and including micro lenses in the emission area of each sub-pixel; and a light-emitting diode in the emission area of each sub-pixel over the overcoat layer, and connected to the corresponding thin film transistor. For a first sub-pixel among the sub-pixels, the overcoat layer can have a depressed pattern corresponding to the non-emission area of the first sub-pixel and overlapping one of the first conductive lines.

    ORGANIC LIGHT-EMITTING DIODE DISPLAY DEVICE
    2.
    发明公开

    公开(公告)号:US20240206293A1

    公开(公告)日:2024-06-20

    申请号:US18528487

    申请日:2023-12-04

    CPC classification number: H10K59/879 H10K59/124

    Abstract: An organic light-emitting diode display device can include a plurality of sub-pixels disposed over a substrate where each sub-pixel has an emission area and a non-emission area, a thin film transistor in the non-emission area of each sub-pixel, and an overcoat layer over the thin film transistor in each sub-pixel and including a plurality of micro lenses in the emission area of each sub-pixel. The organic light-emitting diode display device can further include a light-emitting diode in the emission area of each sub-pixel over the overcoat layer and connected to the corresponding thin film transistor. For one sub-pixel among the plurality of sub-pixels, the emission area of the one sub-pixel has at least one flat portion disposed at the overcoat layer where a top surface of the overcoat layer is flat, and the overcoat layer has at least one lens pattern in the at least one flat portion.

    ORGANIC LIGHT-EMITTING DIODE DISPLAY DEVICE
    4.
    发明公开

    公开(公告)号:US20240215338A1

    公开(公告)日:2024-06-27

    申请号:US18393405

    申请日:2023-12-21

    CPC classification number: H10K59/124 H10K59/122

    Abstract: Discussed is an organic light-emitting diode display device can include sub-pixels on a substrate, and each having an emission area and a non-emission area; a horizontal line and vertical lines crossing each other to define the sub-pixels; a thin film transistor in the non-emission area; an overcoat layer over the thin film transistors and including micro lenses in the emission area; a bank over the overcoat layer and having an opening; and a light-emitting diode in the emission area over the overcoat layer and connected to the thin film transistor, wherein the vertical lines includes first, second, third, and fourth lines, and wherein for a first sub-pixel, an edge of the opening of the bank is spaced apart from the first and second lines, and for a second sub-pixel, an edge of the opening of the bank coincides with one side of each of the third and fourth lines.

    ORGANIC LIGHT-EMITTING DIODE DISPLAY DEVICE
    5.
    发明公开

    公开(公告)号:US20240206294A1

    公开(公告)日:2024-06-20

    申请号:US18533587

    申请日:2023-12-08

    CPC classification number: H10K59/879 H10K59/1213 H10K59/122

    Abstract: An organic light-emitting diode display device include a substrate including a plurality of sub-pixels, each sub-pixel having an emission area and a non-emission area; a circuit portion in the non-emission area of each sub-pixel, and including a thin film transistor in each sub-pixel; an overcoat layer over the thin film transistors, and including a plurality of micro lenses in the emission area of each sub-pixel; and a light-emitting diode in the emission area of each sub-pixel over the overcoat layer, and connected to the corresponding thin film transistor, wherein for a first sub-pixel among the plurality of sub-pixels, the overcoat layer has at least one lens pattern in the non-emission area.

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