公开(公告)号：US20230070356A1

公开(公告)日：2023-03-09

申请号：US17902657

申请日：2022-09-02

Applicant: LG Display Co., Ltd.

Inventor： JeongWoo PARK

IPC: H01L29/417 ,  H01L29/786 ,  H01L27/32 ,  H01L29/66

Abstract: A thin film transistor, a fabricating method of the thin film transistor and a display device comprising the thin film transistor are provided. The thin film transistor can include a source electrode and a drain electrode disposed on a substrate and spaced apart from each other with a gap area formed therebetween, a first active layer disposed in the gap area between the source electrode and the drain electrode, and a gate insulating layer covering the source electrode, the first active layer and the drain electrode. The thin film transistor can further include a gate electrode disposed on the gate insulating layer and overlapping the first active layer. The first active layer can be in contact with a side of the source electrode and a side of the drain electrode.

公开(公告)号：US20230071859A1

公开(公告)日：2023-03-09

申请号：US17901192

申请日：2022-09-01

Applicant: LG Display Co., Ltd.

Inventor： SeHee PARK ,  KwangMin JO ,  JeongWoo PARK

IPC: H01L29/786 ,  H01L27/32

Abstract: A thin film transistor substrate and a display device comprising the same are provided, in which the thin film transistor substrate comprises a first thin film transistor and a second thin film transistor on a base substrate, wherein the first thin film transistor includes a first active layer on the base substrate, and a first gate electrode spaced apart from the first active layer, the second thin film transistor includes a second active layer on the base substrate, a second gate electrode spaced apart from the second active layer, and an auxiliary gate electrode between the second active layer and the second gate electrode, the first active layer and the second active layer are integrally formed and connected to each other, the auxiliary gate electrode is integrally formed with the first gate electrode and spaced apart from the second active layer and the second gate electrode, and the second gate electrode overlaps at least a portion of the auxiliary gate electrode.