公开(公告)号：US20210313470A1

公开(公告)日：2021-10-07

申请号：US17220676

申请日：2021-04-01

Applicant: LG Display Co., Ltd.

Inventor： Hyuk JI ,  Jin Chae JEON ,  Jae Hyun KIM ,  Sun Young CHOI ,  Mi Jin JEONG

IPC: H01L29/786 ,  H01L29/66

Abstract: An oxide semiconductor thin film transistor and a method of forming the oxide semiconductor thin film transistor are provided. The oxide semiconductor thin film transistor can include a semiconductor layer including a channel region, a source region and a drain region; a first gate insulating layer on the semiconductor layer; a gate electrode on the first gate insulating layer; a second gate insulating layer on the gate electrode; an auxiliary electrode on the second gate insulating layer; an interlayer insulating layer on the auxiliary electrode; and a source electrode and a drain electrode on the interlayer insulating layer, wherein the source region and the drain region being disposed at both sides of the channel region, wherein the gate electrode overlapping with the channel region, and the auxiliary electrode overlapping with the gate electrode.