公开(公告)号：US20190179039A1

公开(公告)日：2019-06-13

申请号：US16211107

申请日：2018-12-05

Applicant: LG Display Co., Ltd.

Inventor： Jinpil KIM ,  Minseok YUN

IPC: G01T1/20 ,  H01L27/146 ,  H01L31/0392 ,  H01L31/18 ,  G01T1/202

Abstract: A panel for a flexible digital X-ray detector and a method for manufacturing the same are disclosed. Embodiments of the flexible digital X-ray detector reduce device characteristic deterioration caused by X-ray exposure, increase flexibility to the panel by reducing a thickness of the panel yet provide rigidity to maintain the shape of the panel, and reduce residual impurities during a Laser Lift Off (LLO) process. The panel can include a multi-buffer layer in which a silicon oxide (SiOx) layer and a silicon nitride (SiNx) layer are alternately stacked, and a device array layer and a scintillator layer that are disposed over the multi-buffer layer. During the LLO process, the method for manufacturing the panel includes increasing the hydrogen content using a sacrificial layer including an amorphous silicon (a-Si) layer and a silicon nitride (SiNx) layer disposed at both surfaces of the a-Si layer, such that the amount of residual impurities in the sacrificial layer can be reduced.

公开(公告)号：US20190187305A1

公开(公告)日：2019-06-20

申请号：US16216978

申请日：2018-12-11

Applicant: LG Display Co., Ltd.

Inventor： Youngjin YI ,  Youngyoung CHANG ,  Jinpil KIM ,  Hanseok LEE ,  Hyeji JEON ,  Younghun HAN

IPC: G01T1/24 ,  H01L27/146

Abstract: A substrate for a digital X-ray detector configured to sense an X-ray signal, a detector including the same, and a manufacturing method thereof. According to an embodiment of the present disclosure, the substrate for an X-ray detector includes an interlayer dielectric layer arranged on a thin film transistor, a first passivation layer and a second passivation layer arranged on the interlayer dielectric layer, and a hydrogen blocking layer arranged on at least one of the first passivation layer and the second passivation layer in a transistor region corresponding to the thin film transistor.