Abstract:
A host material is disclosed. The host material, as a compound which is represented by the following formula 1, has a chemical structure in which nitrogen and silicon atoms are chemically and directly bonded to each other. Wherein the “a” is one selected from a material group which includes N, S, O, SO2 and NSiG1G2G2, and the “G1, G2 and G3” each become one of a hydrogen, and aromatic, heterocyclic and aliphatic groups which are or not substituted, respectively.
Abstract translation:公开了主体材料。 作为由下式1表示的化合物的主体材料具有其中氮和硅原子彼此化学且直接键合的化学结构。 其中,“a”是选自包括N,S,O,SO 2和NSiG 1 G 2 G 2的材料组中的一个,“G1,G2和G3”分别成为氢和芳族,杂环和脂族基团, 没有被替代。
Abstract:
A light emitting device and a light emitting display including the same. The light emitting device includes an anode and a cathode facing each other, a first stack and a second stack disposed between the anode and the cathode, the first stack including a first electron transport layer comprising a first material represented by Formula 1, a first blue light emitting layer containing a boron-based compound emitting light having a wavelength of 430 nm to 480 nm, and a first electron-blocking layer including a second material including a spirofluorene group, and at least one hydrogen atom on at least one side of the spirofluorene group is substituted by deuterium, and the second stack including at least two phosphorescent light emitting layers emitting light having a longer wavelength than that of the light emitted by the first blue light emitting layer, and a charge generation layer.
Abstract:
A light emitting device including a first electrode and a second electrode facing each other, and a first blue stack, a first charge generation layer, and a phosphorescent stack disposed between the first electrode and the second electrode. The phosphorescent stack includes a hole transport layer, a red light emitting layer, a green light emitting layer, and an electron transport layer. The red light emitting layer includes an electron transport host represented by Formula 1, a hole transport host different from the hole transport layer, and a red dopant.
Abstract:
A white light emitting device and a display device using the same which can prevent a change in luminance due to change in viewing angle, improve color deviation, and lower a driving voltage at the same time, through a change in an internal stack structure and a thickness an emission-side electrode with regard to a vertical distance from a lower surface of the first electrode to a lower surface of the second electrode.
Abstract:
Disclosed are a light emitting device that includes an additional layer adjacent to a light emitting layer and thus is capable of utilizing, in light emission, holes not used in the light emitting layer, to improve efficiency and lifespan, and a light emitting display device including the same. The light emitting device includes a first electrode and a second electrode facing each other, and an unit comprising a hole transport layer, a light emitting layer, an efficiency-improving layer, and an electron transport layer sequentially stacked between the first electrode and the second electrode, wherein the light emitting layer includes a first host comprising an anthracene derivative and a first blue light emitting dopant, and the efficiency-improving layer includes a second host having bipolarity and a second blue light emitting dopant.
Abstract:
Disclosed is a light emitting device capable of improving color purity and luminance, reducing a material driving voltage, and exhibiting a longer lifespan by changing the configuration of a green stack. The light emitting device includes a first electrode and a second electrode facing each other, and a light emitting unit including a p-type charge generation layer, a hole transport layer, and a green light emitting layer, which are sequentially stacked, wherein the green light emitting layer includes a triazine-based compound as a host and a phosphorescent dopant.