公开(公告)号：US20160036000A1

公开(公告)日：2016-02-04

申请号：US14811191

申请日：2015-07-28

Applicant: LG Display Co., Ltd.

Inventor： Wonyeol Choi ,  ByoungChul Kim ,  MyoungSoo Lee ,  Heesung Park

IPC: H01L51/52 ,  H01L51/56

CPC classification number: H01L51/5253 ,  H01L51/0097 ,  H01L51/56 ,  H01L2251/301 ,  H01L2251/5315 ,  H01L2251/5338 ,  H01L2251/558

Abstract: An organic light-emitting diode (OLED) display includes: a substrate on which an organic light-emitting element is formed; an organic light-emitting element on a substrate; a first inorganic layer on the organic light-emitting element and made substantially of hydrogenated silicon nitride (SiNx:H); an organic layer on a portion of the first inorganic layer; and a second inorganic layer on and completely covering the organic layer. Edges of the second inorganic layer come in contact with the first inorganic layer. A ratio of a number of oxygen atoms to silicon atoms contained in the first inorganic layer ranges from 0.12 to 0.19, and a ratio of a number of nitrogen atoms to silicon atoms contained in the first inorganic layer ranges from 0.9 to 1.5. The first inorganic layer and the second inorganic layer have substantially the same composition.

Abstract translation: 有机发光二极管（OLED）显示器包括：形成有机发光元件的基板; 基板上的有机发光元件; 有机发光元件上的第一无机层，基本由氢化氮化硅（SiNx：H）制成。 在所述第一无机层的一部分上的有机层; 以及在有机层上并完全覆盖有机层的第二无机层。 第二无机层的边缘与第一无机层接触。 第一无机层中含有的氧原子数与硅原子数的比例为0.12〜0.19，第一无机层中含有的氮原子数与硅原子数的比例为0.9〜1.5。 第一无机层和第二无机层具有基本上相同的组成。

公开(公告)号：US09685630B2

公开(公告)日：2017-06-20

申请号：US14811191

申请日：2015-07-28

Applicant: LG Display Co., Ltd.

Inventor： Wonyeol Choi ,  ByoungChul Kim ,  MyoungSoo Lee ,  Heesung Park

IPC: H01L51/52 ,  H01L51/56 ,  H01L51/00

CPC classification number: H01L51/5253 ,  H01L51/0097 ,  H01L51/56 ,  H01L2251/301 ,  H01L2251/5315 ,  H01L2251/5338 ,  H01L2251/558

Abstract: An organic light-emitting diode (OLED) display includes: a substrate on which an organic light-emitting element is formed; an organic light-emitting element on a substrate; a first inorganic layer on the organic light-emitting element and made substantially of hydrogenated silicon nitride (SiNx:H); an organic layer on a portion of the first inorganic layer; and a second inorganic layer on and completely covering the organic layer. Edges of the second inorganic layer come in contact with the first inorganic layer. A ratio of a number of oxygen atoms to silicon atoms contained in the first inorganic layer ranges from 0.12 to 0.19, and a ratio of a number of nitrogen atoms to silicon atoms contained in the first inorganic layer ranges from 0.9 to 1.5. The first inorganic layer and the second inorganic layer have substantially the same composition.