Array substrate having polysilicon TFT for liquid crystal display device and method of manufacturing the same
    1.
    发明申请
    Array substrate having polysilicon TFT for liquid crystal display device and method of manufacturing the same 有权
    具有用于液晶显示装置的多晶硅TFT的阵列基板及其制造方法

    公开(公告)号:US20040075781A1

    公开(公告)日:2004-04-22

    申请号:US10446190

    申请日:2003-05-28

    Inventor: Choong-Yong Sohn

    CPC classification number: G02F1/136259 G02F1/136286 G02F2001/136268

    Abstract: An array substrate for a liquid crystal display (LCD) device includes a plurality of gate lines extending along a first direction on a first substrate, a plurality of data lines extending along a second direction on the first substrate, the gate and data lines defining a pixel region by crossing each other, a thin film transistor formed at a portion adjacent to a cross point of the gate and data lines, the thin film transistor having a gate electrode, an active layer, a source electrode extending from the data line, and a drain electrode spaced apart from the source electrode, the source and drain electrodes contacting the active layer via source and drain contact holes, wherein a first portion of the active layer corresponding to the source electrode has an area wider than other portions of the active layer corresponding to the gate electrode and the drain electrode to include areas of the source electrode and the source contact hole, and a pixel electrode in the pixel region, the pixel electrode being electrically connected to the drain electrode.

    Abstract translation: 一种液晶显示器(LCD)器件阵列衬底,包括在第一衬底上沿着第一方向延伸的多条栅极线,沿着第一衬底上的第二方向延伸的多条数据线,栅极和数据线限定一条 像素区域彼此交叉,形成在与栅极和数据线的交叉点相邻的部分处的薄膜晶体管,所述薄膜晶体管具有栅电极,有源层,从数据线延伸的源电极,以及 与源电极间隔开的漏电极,源极和漏极通过源极和漏极接触孔接触有源层,其中与源电极对应的有源层的第一部分具有比有源层的其它部分宽的面积 对应于栅电极和漏电极以包括源电极和源极接触孔的区域,以及像素区域中的像素电极,像素 电极与漏电极电连接。

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