公开(公告)号：US20020177283A1

公开(公告)日：2002-11-28

申请号：US10140288

申请日：2002-05-08

Applicant: LG.Philips LCD Co., Ltd.

Inventor： Kwang Jo Hwang ,  Binn Kim ,  Hae Yeol Kim ,  Jong Uk Bae

IPC: C23C014/00

CPC classification number: H01L21/02672 ,  C23C16/24 ,  C23C16/56 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/2022 ,  H01L27/12 ,  H01L27/1277 ,  H01L27/1281 ,  H01L29/66757

Abstract: A method of forming polycrystalline silicon for a liquid crystal display device is disclosed in the present invention. The method includes forming an amorphous silicon layer on a substrate, forming a plurality of catalytic metal clusters on the amorphous silicon layer, forming a catalytic metal gettering layer adjacent to the amorphous silicon layer, and heat-treating the substrate including the amorphous silicon layer to transform the amorphous silicon layer into a polycrystalline silicon layer, wherein unreacted catalytic metal clusters migrate to the catalytic metal gettering layer in a direction perpendicular to the substrate.

Abstract translation: 在本发明中公开了一种用于液晶显示装置的多晶硅形成方法。 该方法包括在衬底上形成非晶硅层，在非晶硅层上形成多个催化金属簇，形成与非晶硅层相邻的催化金属吸气层，并将包含非晶硅层的衬底热处理为 将非晶硅层转变成多晶硅层，其中未反应的催化金属簇沿垂直于衬底的方向迁移到催化金属吸气层。