公开(公告)号：US3890163A

公开(公告)日：1975-06-17

申请号：US41128173

申请日：1973-10-31

申请人： LIGNES TELEGRAPH TELEPHON

发明人： PRUNIAUX BERNARD R ,  ASSEMAT JEAN-LOUIS

IPC分类号： H01L21/265 ,  H01L29/00 ,  H01L7/54

CPC分类号： H01L21/2652 ,  H01L21/26513 ,  H01L29/00 ,  Y10S148/003

摘要： The production sequence of the UHF transistors includes at least one ion implantation step for doping the emitter, which takes place after doping of the base, through an emitter window etched from a thin oxide layer closing the base window previously etched from a thick oxide layer. This ion implantation is followed by an anneal in neutral atmosphere while the emitter window remains open, at a temperature lower than 1000*C in the case of silicon. The base is doped either by diffusion or ion implantation. Two further ion implantations are used to degenerate the base contact area and to reduce transversal base resistance.

摘要翻译： UHF晶体管的生产顺序包括至少一个离子注入步骤，用于掺杂发射体，其在掺杂基底之后通过从薄氧化物层蚀刻的发光体窗口进行掺杂，所述发射器窗口从先前从厚氧化物层蚀刻的基底窗口封闭。 该离子注入之后是中性气氛中的退火，而在硅的情况下，在低于1000℃的温度下，发射极窗口保持断开。 碱通过扩散或离子注入进行掺杂。 使用两个另外的离子注入来简化基极接触面积并降低横向基极电阻。