公开(公告)号：US20100190329A1

公开(公告)日：2010-07-29

申请号：US12647369

申请日：2009-12-24

申请人： LILY JIANG ,  MENG FENG CAI ,  JAIN GUANG CHANG

发明人： LILY JIANG ,  MENG FENG CAI ,  JAIN GUANG CHANG

IPC分类号： H01L21/8234 ,  H01L21/336 ,  H01L21/304

CPC分类号： H01L27/11521 ,  H01L21/28273 ,  H01L21/3212 ,  H01L21/84 ,  H01L29/66825

摘要： A method for fabricating flash memory devices, e.g., NAND, NOR, is provided. The method includes providing a semiconductor substrate. The method includes forming a second polysilicon layer overlying a plurality of floating gate structures to cause formation of an upper surface provided on the second polysilicon layer. The upper surface has a first recessed region and a second recessed region. The method includes depositing a doped dielectric material overlying the upper surface to fill the first recessed region and the second recessed region to form a second upper surface region and cover a first elevated region, a second elevated region, and a third elevated region. The method subjects the second upper surface region to a chemical mechanical polishing process to remove the first elevated region, the second elevated region, and the third elevated region to cause formation of a substantially planarized second polysilicon layer free from the fill material.

摘要翻译： 提供了一种用于制造闪存器件的方法，例如NAND，NOR。 该方法包括提供半导体衬底。 该方法包括形成覆盖多个浮动栅结构的第二多晶硅层，以形成设置在第二多晶硅层上的上表面。 上表面具有第一凹陷区域和第二凹陷区域。 该方法包括沉积覆盖上表面的掺杂电介质材料以填充第一凹陷区域和第二凹陷区域以形成第二上表面区域并覆盖第一升高区域，第二升高区域和第三升高区域。 该方法使第二上表面区域进行化学机械抛光工艺以除去第一升高区域，第二升高区域和第三升高区域，从而形成没有填充材料的基本上平坦化的第二多晶硅层。