-
公开(公告)号:US20240088202A1
公开(公告)日:2024-03-14
申请号:US18272513
申请日:2022-01-13
IPC分类号: H10N30/093 , H10N30/067
CPC分类号: H01L28/56 , H10N30/067 , H10N30/093
摘要: A material deposition method comprising: providing a substrate; forming a film of HfO2 by chemical solution deposition, CSD, on the substrate; depositing a solution of PbTiO3 on the film of HfO2; depositing a layer of Pb(Zrx,Ti1-x)O3 on the seed layer, where O≤x≤1; and forming interdigitated electrodes on the Pb(Zrx,Ti1-x)O 3 layer. Also a ferroelectric microsystem obtained by this deposition method. Experiments show an improved fatigue resistance for such a microsystem.