公开(公告)号：US20150123154A1

公开(公告)日：2015-05-07

申请号：US14319800

申请日：2014-06-30

Applicant: Lextar Electronics Corporation

Inventor： Wen-Chieh HSU ,  Tzong-Liang TSAI

IPC: H01L33/42

CPC classification number: H01L33/44

Abstract: A light emitting diode structure includes a first type semiconductor layer, an illumination layer, a second type semiconductor layer, a plurality of first light extraction improvement structures and a transparent conductive layer. The illumination layer is disposed on the first type semiconductor layer. The second type semiconductor layer is disposed on the illumination layer, and the refractive index thereof is n1. The first light extraction improvement structures are disposed on the second type semiconductor layer, and the refractive index thereof is n2. The first light extraction improvement structures are spatially separated from each other, and each of them includes a slanted light outgoing surface oblique to the upper surface of the second type semiconductor layer. The transparent conductive layer conformably covers the first light extraction improvement structures and the second type semiconductor layer, and the refractive index thereof is n3, wherein n2>n3.

Abstract translation: 发光二极管结构包括第一类型半导体层，照明层，第二类型半导体层，多个第一光提取改进结构和透明导电层。 照明层设置在第一类型半导体层上。 第二类型半导体层设置在照明层上，其折射率为n1。 第一光提取改进结构设置在第二类型半导体层上，其折射率为n2。 第一光提取改善结构在空间上彼此分离，并且它们各自包括倾斜于第二类型半导体层的上表面的倾斜光出射表面。 透明导电层顺应地覆盖第一光提取结构和第二类型半导体层，折射率为n3，其中n2> n3。