公开(公告)号：US06522526B2

公开(公告)日：2003-02-18

申请号：US10002197

申请日：2001-12-05

申请人： Li-Duan Tsai ,  Chang-Lin Chyung ,  Wen-Nan Tseng ,  Yu-Tim Tseng ,  Yu-Min Peng

发明人： Li-Duan Tsai ,  Chang-Lin Chyung ,  Wen-Nan Tseng ,  Yu-Tim Tseng ,  Yu-Min Peng

IPC分类号： H01G900

CPC分类号： H01G9/028 ,  H01M6/181 ,  Y10T29/417

摘要： The present invention discloses TCNQ complex, shown as the following formula: wherein X represents identical or different double electron donors, TCNQ represents tetracyanoquinodimethane. The TCNQ complex is prepared by synthesizing TCNQ with double electron donors as the major composition. Different ratios between compositions can be adjusted based on the distinct properties of various electron donors to conform to different needs of manufacturing process. The TCNQ complex of the present invention is resistant to high voltage and high temperature. Its melting point is higher than the soldering temperature. In addition, the TCNQ complex has better conductivity that remains even after the heating/cooling cycle.

摘要翻译： 本发明公开了如下式所示的TCNQ络合物：其中X表示相同或不同的双电子给体，TCNQ表示四氰基醌二甲烷。 TCNQ复合物是通过以双电子给体为主要成分合成TCNQ制备的。 可以基于各种电子给体的不同性质来调整组合物之间的不同比例，以符合制造过程的不同需要。 本发明的TCNQ复合物耐高压高温。 其熔点高于焊接温度。 此外，TCNQ复合物在加热/制冷循环后仍具有更好的导电性。