公开(公告)号：US20240243180A1

公开(公告)日：2024-07-18

申请号：US18153368

申请日：2023-01-12

Applicant: MACRONIX INTERNATIONAL CO., LTD.

Inventor： I-Chen Yang ,  Chun Liang Lu ,  Yung-Hsiang Chen ,  Yao-Wen Chang

IPC: H01L29/423 ,  H01L29/66 ,  H01L29/78

CPC classification number: H01L29/4236 ,  H01L29/4238 ,  H01L29/66621 ,  H01L29/7833 ,  H01L29/66598

Abstract: A semiconductor device includes a substrate, a gate structure, a first doped region and a second doped region. The substrate has a plurality of recesses therein. A gate structure covers the plurality of recesses and a surface of the substrate between the plurality of recesses. The gate structure includes a gate dielectric layer and a gate conductive layer. The gate dielectric layer covers bottom surfaces and sidewalls of the plurality of recesses and the surface of the substrate between the plurality of recesses. The gate conductive layer is formed on the gate dielectric layer, fills in the plurality of recesses and covers the surface of the substrate between the plurality of recesses. The first doped region and the second doped region are located at two sides of the gate structure.