-
公开(公告)号:US20180166148A1
公开(公告)日:2018-06-14
申请号:US15614654
申请日:2017-06-06
Applicant: MACRONIX INTERNATIONAL CO., LTD.
Inventor: Yu-Ming Huang , Hsiang-Pang Li , Kun-Cheng Hsu , Yuan-Hao Chang , Tei-Wei Kuo
CPC classification number: G11C29/44 , G06F11/27 , G11C8/14 , G11C29/10 , G11C2029/1202
Abstract: A control method for a memory device is provided. The control method includes the following steps. Convert multiple input bits on multiple bit-channels into a code word through a polar code transformation. Select a boundary bit-channel among the bit-channels according to a first ranking list for the bit-channels. Identify a target memory cell among the memory cells according to the boundary bit-channel and a generator matrix of the polar code transformation. Decrease a raw bit error rate of the target memory cell.
-
公开(公告)号:US10049764B2
公开(公告)日:2018-08-14
申请号:US15614654
申请日:2017-06-06
Applicant: MACRONIX INTERNATIONAL CO., LTD.
Inventor: Yu-Ming Huang , Hsiang-Pang Li , Kun-Cheng Hsu , Yuan-Hao Chang , Tei-Wei Kuo
CPC classification number: G11C29/44 , G06F11/1012 , G06F11/27 , G11C8/14 , G11C29/10 , G11C2029/1202 , H03M13/13
Abstract: A control method for a memory device is provided. The control method includes the following steps. Convert multiple input bits on multiple bit-channels into a code word through a polar code transformation. Select a boundary bit-channel among the bit-channels according to a first ranking list for the bit-channels. Identify a target memory cell among the memory cells according to the boundary bit-channel and a generator matrix of the polar code transformation. Decrease a raw bit error rate of the target memory cell.
-