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公开(公告)号：US20200058859A1
公开(公告)日：2020-02-20
申请号：US16102985
申请日：2018-08-14
Applicant: MACRONIX INTERNATIONAL CO., LTD.
Inventor： Chao-Hung WANG , Dai-Ying LEE , Kuang-Hao CHIANG , Yu-Hsuan LIN , Tsung-Ming CHEN
IPC: H01L45/00
Abstract: A resistive memory device includes a first electrode, a resistance switching layer and a second electrode. The resistance switching layer is disposed on the first electrode and includes a ternary transition metal oxide. The second electrode is disposed on the resistance switching layer.
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