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公开(公告)号：US10913653B2
公开(公告)日：2021-02-09
申请号：US14658114
申请日：2015-03-13
Applicant: MCube Inc.
Abstract: A method for fabricating a MEMS sensor device. The method can include providing a substrate, forming an IC layer overlying the substrate, forming an oxide layer overlying the IC layer, forming a metal layer coupled to the IC layer through the oxide layer, forming a MEMS layer having a pair of designated sense electrode portions and a designated proof mass portion overlying the oxide layer, forming a via structure within each of the designated sense electrode portions, and etching the MEMS layer to form a pair of sense electrodes and a proof mass from the designated sense electrode portions and proof mass portions, respectively. The via structure can include a ground post and the proof mass can include a sense comb. The MEMS sensor device formed using this method can result is more well-defined edges of the proof mass structure.
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2.发明申请METHOD OF FABRICATING MEMS DEVICES USING PLASMA ETCHING AND DEVICE THEREFOR 审中-公开使用等离子体蚀刻制造MEMS器件的方法及其器件公开(公告)号：US20160257559A1
公开(公告)日：2016-09-08
申请号：US14658114
申请日：2015-03-13
Applicant: MCube Inc.
Abstract: A method for fabricating a MEMS sensor device. The method can include providing a substrate, forming an IC layer overlying the substrate, forming an oxide layer overlying the IC layer, forming a metal layer coupled to the IC layer through the oxide layer, forming a MEMS layer having a pair of designated sense electrode portions and a designated proof mass portion overlying the oxide layer, forming a via structure within each of the designated sense electrode portions, and etching the MEMS layer to form a pair of sense electrodes and a proof mass from the designated sense electrode portions and proof mass portions, respectively. The via structure can include a ground post and the proof mass can include a sense comb. The MEMS sensor device formed using this method can result is more well-defined edges of the proof mass structure.
Abstract translation: 一种用于制造MEMS传感器装置的方法。 该方法可以包括提供衬底，形成覆盖衬底的IC层，形成覆盖IC层的氧化物层，通过氧化层形成耦合到IC层的金属层，形成具有一对指定检测电极的MEMS层 部分和指定的检验质量部分覆盖在氧化物层上，在每个指定的感测电极部分内形成通孔结构，并蚀刻MEMS层以形成一对感测电极和来自指定检测电极部分的检验质量块 部分。 通孔结构可以包括接地柱，并且检测块可以包括感测梳。 使用这种方法形成的MEMS传感器装置可以产生更加明确的边缘的证明质量结构。
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