CAPACITIVE SENSOR INTEGRATED ONTO SEMICONDUCTOR CIRCUIT
    1.
    发明申请
    CAPACITIVE SENSOR INTEGRATED ONTO SEMICONDUCTOR CIRCUIT 审中-公开
    电容式传感器集成在半导体电路上

    公开(公告)号:US20140197500A1

    公开(公告)日:2014-07-17

    申请号:US14152085

    申请日:2014-01-10

    申请人: MEAS FRANCE

    IPC分类号: G01N27/22

    摘要: There is disclosed a capacitive sensor on a passivation layer of a semiconductor circuit such as an ASIC, and a method for manufacturing such sensor. The system and method may comprise: forming a bottom electrode layer and landing pad on a portion of the passivation layer located over active circuitry of the ASIC; forming a gas sensitive layer onto the bottom electrode layer and the landing pad; creating a via through the gas sensitive layer to expose a portion of the landing pad; forming a top electrode layer onto the gas sensitive layer, wherein the top electrode layer completely overlays a surface area of the bottom electrode layer, and wherein the forming process for the top electrode layer deposits a portion of the top electrode layer into the via hole, thereby forming an electrical connection between the top electrode layer and the landing pad.

    摘要翻译: 公开了诸如ASIC的半导体电路的钝化层上的电容式传感器,以及用于制造这种传感器的方法。 该系统和方法可以包括:在位于ASIC的有源电路上的钝化层的一部分上形成底部电极层和着陆焊盘; 在底部电极层和着陆焊盘上形成气敏层; 通过气体敏感层产生通孔以暴露该着陆垫的一部分; 在气敏层上形成上电极层,其中顶电极层完全覆盖底电极层的表面区域,其中上电极层的形成工艺将顶电极层的一部分沉积到通孔中, 从而在顶部电极层和着陆焊盘之间形成电连接。

    Induction Cooker
    2.
    发明申请
    Induction Cooker 审中-公开

    公开(公告)号:US20200296806A1

    公开(公告)日:2020-09-17

    申请号:US16816999

    申请日:2020-03-12

    IPC分类号: H05B6/06 H05B6/12 H05B1/02

    摘要: An induction cooker including a plurality of stoves each having a transmitting coil and a driver driving the transmitting coil, and a controller controlling the driver of each of the stoves to generate a drive signal. The drive signal of each of the stoves is a periodically cyclic modulation signal sequence. The stoves are identifiable and distinguishable from each other by the periodically cyclic modulation signal sequences that are different for each of the stoves.

    Capacitive sensor integrated onto semiconductor circuit
    4.
    发明授权
    Capacitive sensor integrated onto semiconductor circuit 有权
    电容传感器集成到半导体电路上

    公开(公告)号:US09239310B2

    公开(公告)日:2016-01-19

    申请号:US14152085

    申请日:2014-01-10

    申请人: MEAS FRANCE

    摘要: There is disclosed a capacitive sensor on a passivation layer of a semiconductor circuit such as an ASIC, and a method for manufacturing such sensor. The system and method may comprise: forming a bottom electrode layer and landing pad on a portion of the passivation layer located over active circuitry of the ASIC; forming a gas sensitive layer onto the bottom electrode layer and the landing pad; creating a via through the gas sensitive layer to expose a portion of the landing pad; forming a top electrode layer onto the gas sensitive layer, wherein the top electrode layer completely overlays a surface area of the bottom electrode layer, and wherein the forming process for the top electrode layer deposits a portion of the top electrode layer into the via hole, thereby forming an electrical connection between the top electrode layer and the landing pad.

    摘要翻译: 公开了诸如ASIC的半导体电路的钝化层上的电容式传感器,以及用于制造这种传感器的方法。 该系统和方法可以包括:在位于ASIC的有源电路上的钝化层的一部分上形成底部电极层和着陆焊盘; 在底部电极层和着陆焊盘上形成气敏层; 通过气体敏感层产生通孔以暴露该着陆垫的一部分; 在气敏层上形成上电极层,其中顶电极层完全覆盖底电极层的表面区域,其中上电极层的形成工艺将顶电极层的一部分沉积到通孔中, 从而在顶部电极层和着陆焊盘之间形成电连接。