公开(公告)号：US11790977B2

公开(公告)日：2023-10-17

申请号：US17349934

申请日：2021-06-17

Applicant: MEDIATEK INC.

Inventor： Chung-Hwa Wu ,  Ming-Hsin Yu

IPC: G11C11/4074 ,  G11C11/406 ,  G11C11/4094

CPC classification number: G11C11/4074 ,  G11C11/406 ,  G11C11/4094

Abstract: The present invention provides a memory controller including a plurality of channels. A first channel of the plurality of channels includes a first transmitter, a first pull-up variable resistor and a first pull-down variable resistor, wherein the first transmitter is configured to generate a first data signal to a memory module, the first pull-up variable resistor is coupled between a supply voltage and an output terminal of the first transmitter, and the first pull-down variable resistor is coupled to the output terminal of the first transmitter. The control circuit is coupled to the plurality of channels, and is configured to control the first pull-up variable resistor and/or the first pull-down variable resistor according to a reference voltage used by the memory module.

公开(公告)号：US20220020419A1

公开(公告)日：2022-01-20

申请号：US17349934

申请日：2021-06-17

Applicant: MEDIATEK INC.

Inventor： Chung-Hwa Wu ,  Ming-Hsin Yu

IPC: G11C11/4074 ,  G11C11/406 ,  G11C11/4094

Abstract: The present invention provides a memory controller including a plurality of channels. A first channel of the plurality of channels includes a first transmitter, a first pull-up variable resistor and a first pull-down variable resistor, wherein the first transmitter is configured to generate a first data signal to a memory module, the first pull-up variable resistor is coupled between a supply voltage and an output terminal of the first transmitter, and the first pull-down variable resistor is coupled to the output terminal of the first transmitter. The control circuit is coupled to the plurality of channels, and is configured to control the first pull-up variable resistor and/or the first pull-down variable resistor according to a reference voltage used by the memory module.