公开(公告)号：US20200066617A1

公开(公告)日：2020-02-27

申请号：US16668296

申请日：2019-10-30

Applicant: MICRON TECHNOLOGY, INC.

Inventor： DEEPAK C. PANDEY ,  HAITAO LIU ,  CHANDRA MOULI

IPC: H01L23/48 ,  H01L23/538 ,  H01L21/768

Abstract: Apparatuses and methods ate disclosed herein for the formation of to capacitance through substrate via structures. An example apparatus includes an opening formed in a substrate. Wherein the opening has at least one sidewall, a first dielectric at least formed on the sidewall of the opening, a first conductor at least formed on the first dielectric, a second dielectric at least formed on the first conductor, and a second conductor at least formed on a sidewall of the second dielectric.

公开(公告)号：US20220310486A1

公开(公告)日：2022-09-29

申请号：US17839222

申请日：2022-06-13

Applicant: MICRON TECHNOLOGY, INC.

Inventor： DEEPAK C. PANDEY ,  HAITAO LIU ,  CHANDRA MOULI

IPC: H01L23/48 ,  H01L23/538 ,  H01L21/768

Abstract: Apparatuses and methods are disclosed herein for the formation of low capacitance through substrate via structures. An example apparatus includes an opening formed in a substrate, wherein the opening has at least one sidewall, a first dielectric at least formed on the sidewall of the opening, a first conductor at least formed on the first dielectric, a second dielectric at least formed on the first conductor, and a second conductor at least formed on a sidewall of the second dielectric.

公开(公告)号：US20170256490A1

公开(公告)日：2017-09-07

申请号：US15062675

申请日：2016-03-07

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Deepak C. Pandey ,  HAITAO LIU ,  CHANDRA MOULI

IPC: H01L23/522 ,  H01L23/532 ,  H01L23/528 ,  H01L21/768 ,  H01L21/02

Abstract: Apparatuses and methods are disclosed herein for the formation of low capacitance through substrate via structures. An example apparatus includes an opening formed in a substrate, wherein the opening has at least one sidewall, a first dielectric at least formed on the sidewall of the opening, a first conductor at least formed on the first dielectric, a second dielectric at least formed on the first conductor, and a second conductor at least formed on a sidewall of the second dielectric.