公开(公告)号：US20140016389A1

公开(公告)日：2014-01-16

申请号：US13834009

申请日：2013-03-15

Applicant: MOSAID TECHNOLOGIES INCORPORATED

Inventor： Yonghua LIU ,  James KOSOLOWSKI

IPC: G11C11/401

CPC classification number: G11C11/401 ,  G11C11/404 ,  G11C11/4074 ,  G11C14/00 ,  G11C29/02 ,  G11C2207/2227 ,  G11C2211/4016

Abstract: A semiconductor device includes a Dynamic Random Access Memory (DRAM) memory array. The DRAM memory array includes a plurality of DRAM memory cells. Each of the DRAM memory cells includes a capacitor. Switching circuitry within the semiconductor device is configured to be switched to a state in which the switching circuitry connects capacitors of at least two of the DRAM memory cells together to provide a bulk capacitance between a first node and a second node.

Abstract translation: 半导体器件包括动态随机存取存储器（DRAM）存储器阵列。 DRAM存储器阵列包括多个DRAM存储单元。 每个DRAM存储单元包括电容器。 半导体器件内的开关电路被配置为切换到其中开关电路将至少两个DRAM存储单元的电容器连接在一起以在第一节点和第二节点之间提供体电容的状态。