公开(公告)号：US08962466B2

公开(公告)日：2015-02-24

申请号：US13895059

申请日：2013-05-15

Applicant: Macronix International Co., Ltd.

Inventor： Feng-Min Lee ,  Erh-Kun Lai ,  Wei-Chih Chien ,  Ming-Hsiu Lee ,  Chih-Chieh Yu

IPC: H01L29/02 ,  H01L21/3205 ,  H01L47/00 ,  H01L21/02 ,  H01L45/00

CPC classification number: H01L21/02551 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02614 ,  H01L27/2436 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/141 ,  H01L45/146 ,  H01L45/1633

Abstract: A metal oxide formed by in situ oxidation assisted by radiation induced photo-acid is described. The method includes depositing a photosensitive material over a metal surface of an electrode. Upon exposure to radiation (for example ultraviolet light), a component, such as a photo-acid generator, of the photosensitive material forms an oxidizing reactant, such as a photo acid, which causes oxidation of the metal at the metal surface. As a result of the oxidation, a layer of metal oxide is formed. The photosensitive material can then be removed, and subsequent elements of the component can be formed in contact with the metal oxide layer. The metal oxide can be a transition metal oxide by oxidation of a transition metal. The metal oxide layer can be applied as a memory element in a programmable resistance memory cell. The metal oxide can be an element of a programmable metallization cell.

Abstract translation: 描述了通过由辐射诱导的光酸辅助的原位氧化形成的金属氧化物。 该方法包括将感光材料沉积在电极的金属表面上。 感光材料暴露于辐射（例如紫外光）时，诸如光酸产生剂的组分形成氧化反应物，例如导致金属在金属表面氧化的光酸。 作为氧化的结果，形成金属氧化物层。 然后可以去除感光材料，并且可以将元件的后续元件形成为与金属氧化物层接触。 金属氧化物可以通过过渡金属的氧化而成为过渡金属氧化物。 金属氧化物层可以作为可编程电阻存储单元中的存储元件来应用。 金属氧化物可以是可编程金属化电池的元件。