公开(公告)号：US09680095B2

公开(公告)日：2017-06-13

申请号：US13931512

申请日：2013-06-28

Applicant: Macronix International Co., Ltd.

Inventor： I Yueh Chen ,  Wei-Chih Chien

IPC: H01L45/00

CPC classification number: H01L45/146 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/145 ,  H01L45/1633

Abstract: A structure for a resistive memory device and a method to fabricate the same is disclosed. The method includes providing a bottom electrode comprising a metal and forming a memory layer on the bottom electrode. The memory layer includes a first layer of metal oxide, and a second layer including the nitrogen-containing metal oxide. A top electrode is formed over the memory layer.