公开(公告)号：US20100245030A1

公开(公告)日：2010-09-30

申请号：US12294849

申请日：2007-03-28

申请人： Makoto Ikeda ,  Mitsuhiro Wada ,  Shinichi Inoue ,  Minoru Isshiki ,  Jae-Won Lim ,  Joon Woon Bae

发明人： Makoto Ikeda ,  Mitsuhiro Wada ,  Shinichi Inoue ,  Minoru Isshiki ,  Jae-Won Lim ,  Joon Woon Bae

IPC分类号： H01C1/012 ,  H01C17/12

CPC分类号： H01C17/12 ,  G01J5/02 ,  G01J5/024 ,  G01J5/04 ,  G01J5/046 ,  H01C7/006 ,  H01L37/00 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/1815 ,  Y10T29/49085 ,  Y10T29/49099 ,  H01L2924/00014 ,  H01L2924/00

摘要： It is an object to provide processes for the production of thin-film sensors whereby crystals are strongly oriented without cost-adding steps such as heating and variations in electrical properties are small among the obtainable products. A process of producing a thin-film sensor is a process of producing a thin-film sensor that include an insulating substrate and an electrical resistor which is made of a metal and is provided on the insulating substrate, the process including a step of forming the electrical resistor by sputtering the metal while applying a negative direct-current voltage to the insulating substrate.

摘要翻译： 本发明的目的是提供用于生产薄膜传感器的方法，其中晶体被强取向，而不需要诸如加热的成本增加步骤，并且可获得的产品中电性能的变化很小。 制造薄膜传感器的方法是制造薄膜传感器的过程，该薄膜传感器包括绝缘基板和由金属制成并设置在绝缘基板上的电阻器，该方法包括以下步骤： 通过溅射金属，同时向绝缘基板施加负的直流电压。