公开(公告)号：USRE45206E1

公开(公告)日：2014-10-28

申请号：US13738947

申请日：2013-01-10

Applicant: Mapper Lithography IP B.V.

Inventor： Pieter Kruit ,  Erwin Slot ,  Tijs Frans Teepen ,  Marco Jan-Jaco Wieland ,  Stijin Willem Herman Karel Steenbrink

IPC: H01J3/00

CPC classification number: H01J37/3177 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/3045 ,  H01J2237/2443 ,  H01J2237/2446 ,  H01J2237/30433 ,  H01J2237/31757

Abstract: Lithography system, sensor and method for measuring properties of a massive amount of charged particle beams of a charged particle beam system, in particular a direct write lithography system, in which the charged particle beams are converted into light beams by using a converter element, using an array of light sensitive detectors such as diodes, CCD or CMOS devices, located in line with said converter element, for detecting said light beams, electronically reading out resulting signals from said detectors after exposure thereof by said light beams, utilizing said signals for determining values for one or more beam properties, thereby using an automated electronic calculator, and electronically adapting the charged particle system so as to correct for out of specification range values for all or a number of said charged particle beams, each for one or more properties, based on said calculated property values.

Abstract translation: 用于测量带电粒子束系统的大量带电粒子束的特性的光刻系统，传感器和方法，特别是直接写入光刻系统，其中通过使用转换器元件将带电粒子束转换成光束，使用 与所述转换器元件成一直线的一系列光敏检测器，例如二极管，CCD或CMOS器件，用于检测所述光束，用所述光束曝光之后，从所述检测器电子地读出所得到的信号，利用所述信号确定 一个或多个光束特性的值，从而使用自动电子计算器，以及电子地调整带电粒子系统，以便校正超出所有或多个所述带电粒子束的规格范围值，每一个用于一个或多个属性， 基于所述计算的属性值。