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公开(公告)号：US09111661B2
公开(公告)日：2015-08-18
申请号：US13805161
申请日：2011-04-18
摘要： A cable for high-voltage electronic devices including an inner semiconductive layer, a high-voltage insulator, an outer semiconductive layer, a shielding layer, and a sheath which are provided on an outer periphery of a cable core part in the order mentioned, wherein the high-voltage insulator is made of an insulating composition whose temperature dependence parameter DR found by the following expression is 1.0 or less: DR=log R23° C.−log R90° C. (where R23° C. is volume resistivity (Ω·cm) at 23° C. and R90° C. is volume resistivity (Ω·cm) at 90° C.). The cable for high-voltage electronic devices is small in diameter and has an excellent withstand voltage characteristic.
摘要翻译： 一种用于高电压电子器件的电缆，包括按照所述顺序设置在电缆芯部分的外周上的内半导体层，高压绝缘体，外半导体层，屏蔽层和护套，其中 高压绝缘体由以下表达式求出的温度依赖参数DR为1.0以下的绝缘组合物制成：DR = log R23℃-log R90℃（其中R23℃为体积电阻率（＆OHgr ;·cm）在23℃和R90℃是体积电阻率（＆OHgr·cm）在90℃）。 高压电子器件的电缆直径小，耐压特性优良。
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公开(公告)号：US20130092416A1
公开(公告)日：2013-04-18
申请号：US13805161
申请日：2011-04-18
IPC分类号： H01B9/02
摘要： A cable for high-voltage electronic devices including an inner semiconductive layer, a high-voltage insulator, an outer semiconductive layer, a shielding layer, and a sheath which are provided on an outer periphery of a cable core part in the order mentioned, wherein the high-voltage insulator is made of an insulating composition whose temperature dependence parameter DR found by the following expression is 1.0 or less: DR=log R23° C.−log R90° C. (where R23° C. is volume resistivity (Ω·cm) at 23° C. and R90° C. is volume resistivity (Ω·cm) at 90° C.). The cable for high-voltage electronic devices is small in diameter and has an excellent withstand voltage characteristic.
摘要翻译： 一种用于高电压电子器件的电缆，包括按照所述顺序设置在电缆芯部分的外周上的内半导体层，高压绝缘体，外半导体层，屏蔽层和护套，其中 高压绝缘体由以下表达式求出的温度依赖参数DR为1.0以下的绝缘性组合物构成：DR = log R23℃-log R90℃（其中R23℃为体积电阻率（Ω cm），R90℃为90℃下的体积电阻率（Ω·cm）。 高压电子器件的电缆直径小，耐压特性优良。
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3.发明授权公开(公告)号：US07253333B2
公开(公告)日：2007-08-07
申请号：US10469356
申请日：2002-02-26
申请人： Manami Tanaka , Masamitsu Yamaguchi
发明人： Manami Tanaka , Masamitsu Yamaguchi
IPC分类号： A01K67/00 , A01K67/033
CPC分类号： A01K67/0339 , A01K2217/05 , A01K2267/0331 , C07K14/715
摘要： Provided is a special Drosophila strain having a Bradeion gene artificially incorporated therein to exclusively express the gene in the compound eyes and thus to exhibit rough eye. The Drosophila strain has the following properties: (a) a human-derived Bradeion gene has been transferred in the strain to express the human-derived protein Bradeion in the compound eyes from the developmental period; (b) the compound eyes show morphological abnormality due to the expression of Bradeion; and (c) the morphological abnormality occurring in the compound eyes is multiplied according to the number of transferred Bradeion genes.
摘要翻译： 提供了一种特异的果蝇菌株，其具有人工并入其中的Bradeion基因，以专门表达复合眼中的基因，从而表现出粗糙的眼睛。 果蝇菌株具有以下性质：（a）人源性Bradeion基因已经在菌株中转移以在发育期内在复眼中表达人源蛋白质Bradeion; （b）复合眼睛由于Bradeion的表达而显示形态异常; 和（c）化合物眼中发生的形态异常根据转移的Bradeion基因的数量而增加。
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公开(公告)号：US07092610B2
公开(公告)日：2006-08-15
申请号：US10717498
申请日：2003-11-21
摘要： In order to supply the optical fiber for attenuating optical signal enable the attenuation amount to become flat in wide wavelength scope, simultaneously adding at least two kinds of dopants for attenuating optical signal over the core and the cladding of the optical fiber. Then, properly adjusting the kind and the concentration of dopants for manufacturing the optical fiber 1 for attenuating optical signal; simultaneously adding the dopant enabling the absorption of optical signal to increase with the wavelength become long and the dopant enabling the absorption of optical signal to decrease with the wavelength become long. As the dopant, it is desired to select at least two kinds of transitional metals from Co, Ni, Cr, V, Fe, Mn, Tb and Tm. Further, as the doped area, it is desired to dope the 6 times of the center portion of the core from the center of the core.
摘要翻译： 为了提供用于衰减光信号的光纤使得衰减量在宽波长范围内变得平坦，同时添加至少两种用于在光纤的芯和包层上衰减光信号的掺杂剂。 然后，适当调整制造用于衰减光信号的光纤1的掺杂剂的种类和浓度; 同时添加能够使光信号的吸收随着波长的增加而增加的掺杂剂，并且使得能够使波长的光信号的吸收降低的掺杂剂变长。 作为掺杂剂，期望从Co，Ni，Cr，V，Fe，Mn，Tb和Tm中选择至少两种过渡金属。 此外，作为掺杂区域，期望从芯的中心掺入芯的中心部分的6倍。
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