Low pH Development Solutions for Chemically Amplified Photoresists
    1.
    发明申请
    Low pH Development Solutions for Chemically Amplified Photoresists 失效
    用于化学放大光致抗蚀剂的低pH开发解决方案

    公开(公告)号:US20070154848A1

    公开(公告)日:2007-07-05

    申请号:US11684672

    申请日:2007-03-12

    IPC分类号: G03C5/00

    摘要: A method for carrying out positive tone lithography with a carbon dioxide development system is carried out by: (a) providing a substrate, the substrate having a polymer resist layer formed thereon, (b) exposing at least one portion of the polymer resist layer to radiant energy causing a chemical shift to take place in the exposed portion and thereby form at least one light field region in the polymer resist layer while concurrently maintaining at least one portion of the polymer layer unexposed to the radiant energy to thereby form at least one dark field region in the polymer resist layer; (c) optionally baking the polymer resist layer; (d) contacting the polymer resist layer to a carbon dioxide solvent system, the solvent system comprising a polar group, under conditions in which the at least one light field region is preferentially removed from the substrate by the carbon dioxide solvent system as compared to the at least one dark field region; wherein the carbon dioxide solvent system comprises a first phase and a second phase, the first phase comprising carbon dioxide and the second phase comprising a polar fluid, with the at least one light field region being preferentially soluble in the polar fluid as compared to the at least one dark field region.

    摘要翻译: 通过以下方式进行用二氧化碳显影系统进行正色调光刻的方法:(a)提供衬底,其上形成有聚合物抗蚀剂层的衬底,(b)将至少一部分聚合物抗蚀剂层暴露于 导致在暴露部分发生化学位移的辐射能,从而在聚合物抗蚀剂层中形成至少一个光场区域,同时保持聚合物层的至少一部分未暴露于辐射能,从而形成至少一个黑暗 聚合物抗蚀剂层中的场区域; (c)任选地烘烤聚合物抗蚀剂层; (d)将所述聚合物抗蚀剂层与二氧化碳溶剂体系接触,所述溶剂体系包含极性基团,其中所述至少一个光场区域优选地通过二氧化碳溶剂系统从所述底物除去, 至少一个暗场区域; 其中所述二氧化碳溶剂系统包括第一相和第二相,所述第一相包含二氧化碳,所述第二相包含极性流体,其中所述至少一个光场区域优先溶于极性流体中,与第 至少一个暗场区域。

    Low pH development solutions for chemically amplified photoresists
    2.
    发明授权
    Low pH development solutions for chemically amplified photoresists 失效
    用于化学放大光致抗蚀剂的低pH开发解决方案

    公开(公告)号:US07329483B2

    公开(公告)日:2008-02-12

    申请号:US11684672

    申请日:2007-03-12

    IPC分类号: G03F7/32

    摘要: A method for carrying out positive tone lithography with a carbon dioxide development system is carried out by: (a) providing a substrate, the substrate having a polymer resist layer formed thereon, (b) exposing at least one portion of the polymer resist layer to radiant energy causing a chemical shift to take place in the exposed portion and thereby form at least one light field region in the polymer resist layer while concurrently maintaining at least one portion of the polymer layer unexposed to the radiant energy to thereby form at least one dark field region in the polymer resist layer; (c) optionally baking the polymer resist layer; (d) contacting the polymer resist layer to a carbon dioxide solvent system, the solvent system comprising a polar group, under conditions in which the at least one light field region is preferentially removed from the substrate by the carbon dioxide solvent system as compared to the at least one dark field region; wherein the carbon dioxide solvent system comprises a first phase and a second phase, the first phase comprising carbon dioxide and the second phase comprising a polar fluid, with the at least one light field region being preferentially soluble in the polar fluid as compared to the at least one dark field region.

    摘要翻译: 通过以下方式进行用二氧化碳显影系统进行正色调光刻的方法:(a)提供衬底,其上形成有聚合物抗蚀剂层的衬底,(b)将至少一部分聚合物抗蚀剂层暴露于 导致在暴露部分发生化学位移的辐射能,从而在聚合物抗蚀剂层中形成至少一个光场区域,同时保持聚合物层的至少一部分未暴露于辐射能,从而形成至少一个黑暗 聚合物抗蚀剂层中的场区域; (c)任选地烘烤聚合物抗蚀剂层; (d)将所述聚合物抗蚀剂层与二氧化碳溶剂体系接触,所述溶剂体系包含极性基团,其中所述至少一个光场区域优选地通过二氧化碳溶剂系统从所述底物除去, 至少一个暗场区域; 其中所述二氧化碳溶剂系统包括第一相和第二相,所述第一相包含二氧化碳,所述第二相包含极性流体,其中所述至少一个光场区域优先溶于极性流体中,与第 至少一个暗场区域。

    Low pH development solutions for chemically amplified photoresists
    3.
    发明授权
    Low pH development solutions for chemically amplified photoresists 有权
    用于化学放大光致抗蚀剂的低pH开发解决方案

    公开(公告)号:US07235347B2

    公开(公告)日:2007-06-26

    申请号:US11133077

    申请日:2005-05-19

    IPC分类号: G03F7/30

    摘要: A method for carrying out positive tone lithography with a carbon dioxide development system is carried out by: (a) providing a substrate, the substrate having a polymer resist layer formed thereon, (b) exposing at least one portion of the polymer resist layer to radiant energy causing a chemical shift to take place in the exposed portion and thereby form at least one light field region in the polymer resist layer while concurrently maintaining at least one portion of the polymer layer unexposed to the radiant energy to thereby form at least one dark field region in the polymer resist layer; (c) optionally baking the polymer resist layer; (d) contacting the polymer resist layer to a carbon dioxide solvent system, the solvent system comprising a polar group, under conditions in which the at least one light field region is preferentially removed from the substrate by the carbon dioxide solvent system as compared to the at least one dark field region; wherein the carbon dioxide solvent system comprises a first phase and a second phase, the first phase comprising carbon dioxide and the second phase comprising a polar fluid, with the at least one light field region being preferentially soluble in the polar fluid as compared to the at least one dark field region.

    摘要翻译: 通过以下方式进行用二氧化碳显影系统进行正色调光刻的方法:(a)提供衬底,其上形成有聚合物抗蚀剂层的衬底,(b)将至少一部分聚合物抗蚀剂层暴露于 导致在暴露部分发生化学位移的辐射能,从而在聚合物抗蚀剂层中形成至少一个光场区域,同时保持聚合物层的至少一部分未暴露于辐射能,从而形成至少一个黑暗 聚合物抗蚀剂层中的场区域; (c)任选地烘烤聚合物抗蚀剂层; (d)将所述聚合物抗蚀剂层与二氧化碳溶剂体系接触,所述溶剂体系包含极性基团,其中所述至少一个光场区域优选地通过二氧化碳溶剂系统从所述底物除去, 至少一个暗场区域; 其中所述二氧化碳溶剂系统包括第一相和第二相,所述第一相包含二氧化碳,所述第二相包含极性流体,其中所述至少一个光场区域优先溶于极性流体中,与第 至少一个暗场区域。